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| Ordering number : ENN5423A 2SJ459 P-Channel Silicon MOSFET 2SJ459 Ultrahigh-Speed Switching Applications Features * Package Dimensions unit : mm 2093A [2SJ459] 0.9 High-speed diode incorporated. 10.2 4.5 1.3 11.5 1.6 20.9 1.2 11.0 9.4 0.8 8.8 0.4 1 2 3 2.7 1 : Gate 2 : Drain 3 : Source SANYO : SMP 2.55 2.55 unit : mm 2090A [2SJ459] 0.8 10.2 4.5 1.3 9.9 1.5max 8.8 3.0 2.55 1.2 2.55 1.35 1 0.8 2 3 0 to 0.3 0.4 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD 2.55 2.55 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 83002 TS IM TA-100040 No.5423-1/4 2.7 1.4 2SJ459 Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions Ratings --450 30 --4 --16 1.65 70 150 --55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Diode Reverse Recovery Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf VSD trr Conditions ID=--10mA, VGS=0 VDS=--360V, VGS=0 VGS=30V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=-2A ID=--2A, VGS=--10V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. IS=--4A, VGS=0 IS=--4A, di / dt=100A / s --2.0 1.2 2.4 2.0 1500 230 80 35 50 300 80 -1.5 150 195 2.8 Ratings min --450 --1.0 100 --3.0 typ max Unit V mA nA V S pF pF pF ns ns ns ns V ns Marking : J459 *(Note) Care must be taken in handling the 2SJ459 because no protection diode is provided between gate and source. Switching Time Test Circuit VDD= --200V VIN 0V --10V VIN PW=10s D.C.1% ID= --2A RL=100 D VOUT G P.G 50 2SJ459 S No.5423-2/4 2SJ459 --7 ID -- VDS --6 ID -- VGS VDS= --10V Tc= --25C --6 Drain Current, ID -- A --5 -- Drain Current, ID -- A -- .0 10 V --5 V 6.0 25C --4 --4 --5.0V 75C --3 --3 --4.5V --2 --2 --4.0V --1 0 0 --5 --10 --15 --20 IT03686 --1 VGS= --3.5V 0 0 --2.5 --5.0 --7.5 --10.0 --12.5 --15.0 IT03687 Drain-to-Source Voltage, VDS -- V 3.5 Gate-to-Source Voltage, VGS -- V 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 --50 RDS(on) -- VGS RDS(on) -- Tc Tc=25C Static Drain-to-Source On-State Resistance, RDS(on) -- Static Drain-to-Source On-State Resistance, RDS(on) -- 3.0 --2A 2.5 ID= --4A 0V = --1 VGS V --20 2.0 --1A 1.5 0 --2 --4 --6 --8 --10 --12 --14 IT03688 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V --10 yfs -- ID Case Temperature, Tc -- C --5.0 --4.5 IT03689 VGS(off) -- Tc VDS= --10V ID= --1mA Forward Transfer Admitance, yfs -- S 7 5 VDS= --10V Cutoff Voltage, VGS(off) -- V 2 3 5 7 --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 3 2 Tc= --25 C 25 C --1.0 7 5 3 2 C 75 --0.1 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 3 2 --10 7 5 3 2 --1.0 7 5 --10 IT03690 0 --50 --25 0 25 50 75 100 125 150 Case Temperature, Tc -- C 10000 7 5 3 2 IT03691 IF -- VSD VGS=0 Ciss, Coss, Crss -- VDS f=1MHz Forward Current, IF -- A Ciss, Coss, Crss -- pF Ciss 1000 7 5 3 2 100 7 5 3 2 10 Coss Crss 2 --0.1 7 5 0 --0.2 --0.4 Tc=75 C 25C --25C --0.6 --0.8 3 --1.0 --1.2 --1.4 0 --5 --10 --15 --20 --25 --30 IT03693 Diode Forward Voltage, VSD -- V IT03692 Drain-to-Source Voltage, VDS -- V No.5423-3/4 2SJ459 3 2 --10 7 5 Forward Bias A S O IDP= --16A 10 0 2.5 PD -- Ta ID= --4A DC Drain Current, ID -- A 1m s Allowable Power Dissipation, PD -- W 10s 2.0 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 10 op 10 m 0m s s tio n s 1.65 1.5 Operation in this area is limited by RDS(on). era 1.0 0.5 --0.01 --1.0 Tc=25C single pulse 2 3 5 7 --10 2 3 5 7 --100 2 3 0 5 7--1000 IT03694 0 20 40 60 80 100 120 140 160 Drain-to-Source Voltage, VDS -- V 80 Ambient Temperature, Ta -- C IT04253 PD -- Tc Allowable Power Dissipation, PD -- W 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc -- C IT03695 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2002. Specifications and information herein are subject to change without notice. PS No.5423-4/4 |
Price & Availability of 2SJ459
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